In addition, some modifications on several computational methods are also presented. Using LMTO method the electronic structure of several systems are studied, and some results are obtained. They are: The ideal Nb (100) surface has three surface states, the multi-layer relaxed surface has two surface states. The surface energy of the ideal surface is higher than that of the relaxed surface, that means that the multi-layer relaxed surface is more stable than the former one, which supports the LEED results. The mono-layer relaxed Ag (111) surface is the most stable one among several" stable surface models"presented by several researchers. The surface energy of Ag (111) surface is higher than that of surface Ag (001), which supports some experimental results such as different reaction rate at different surface orientations for the same material. The surafce states of Si (111) surface not only locate near the Fermi level, but also in the valence band, which agrees well with Cohen's conclusion. Si (111)-H is an effective model for analysing the surface states and H adsorbed on the back surface is a good method for improving the convincingness of the results obtained on thinner slab models. The surface stability depends on three different kinds of MoSi〓(001) surfaces, the surface with mono-layer Si is the most stable one, and the surface with Mo at the first layer is the most unstable one among them. These are consistant with the Kemoda's experimental results. The valence bands of clean or K adsorbed CdTe (111) surface agrees well with the synchrotron radiation studies. The surface of CdTe (111) consists of four kinds of surface models which show different surface electronic structures and different surface structure stabilities. The conclusion agrees well with Wu's experimental work. The different absorbed alkali metals on the CdTe (111) surface give different adsorption characteristics which have relations not only with the valence electrons, but also with the core ones of the alkali metals. The electonic structures of Si-C alloys are different from that of Si-Ge alloys, and the energy band gaps of Si-C alloys do not increase linearly with Carbon concentration, our conclusion supports Alexander's results, but conflicts with Soref's one.

現(xiàn)分述如下： LMTO方法及其應(yīng)用方面：1）通過對(duì)Nb（100）表面電子態(tài)分析發(fā)現(xiàn)清潔理想表面有三個(gè)表面態(tài)，多層弛豫表面有兩個(gè)表面態(tài)最新欧美操屄视频；表面能大小說明多層弛豫表面更穩(wěn)定50熟妇，支持了LEED結(jié)果。2）通過對(duì)采用不同方法獲得的幾種不同Ag（111）表面穩(wěn)定結(jié)構(gòu)的表面能計(jì)算分析毛片黄色网站在线观看，給出了單層弛豫表面為Ag（111）表面的最穩(wěn)定結(jié)構(gòu)男人的天堂视频；從Ag（111）單層弛豫表面和Ag（001）表面的表面能比較，發(fā)現(xiàn)了Ag（001）表面表面能要比Ag（111）小的永久女性毛片免费看，表明了同種物質(zhì)不同表面取向?qū)⒈憩F(xiàn)出不同物理黄色网站黄色网址视频、化學(xué)性質(zhì)，這是與實(shí)驗(yàn)中得出的結(jié)論是吻合的2019人妻巨乳超碰，3）通過對(duì)Si（111）表面態(tài)分析日韩精品更新资源在线观看视频，不僅發(fā)現(xiàn)了Si（111）表面不僅具有居于費(fèi)米能級(jí)附近的懸掛鍵所對(duì)應(yīng)的表面態(tài)，而且還有很多表面態(tài)位于價(jià)帶能量范圍內(nèi)国产在线视频国产永久2021，與Cohen等結(jié)果一致中国免费的黄色网站，H飽和slab模型背表面相當(dāng)于增加了slab層的厚度.国产综合网在线观看，是一有效的變相增加slab層厚的方法，弛豫表面較清潔理想表面價(jià)帶譜們低能端的少許移動(dòng)永久黄网站色视频免费APP下载，預(yù)示著總能降低久久久久精品视频这里只有精品，說明弛豫表面較清潔理想表面穩(wěn)定。4）MoSi〓具有三種表面免费观看国产黄页网站，從費(fèi)米能級(jí)上態(tài)密度值大小得到單層Si表面最穩(wěn)定人人操人人莫人人干，Mo原子為表層原子的表面最不穩(wěn)定，雙層Si原子表面居中的結(jié)論一级A片全网免费观看，這與Kemoda等人實(shí)驗(yàn)結(jié)果是一致的粉嫩人妻一区。5）通過對(duì)CdTe（111）表面表面電子態(tài)、表面結(jié)構(gòu)穩(wěn)定性及表面H偷拍一级黄片操操操视频、堿金屬吸附的電子結(jié)構(gòu)系列研究啊啊啊轻点在线观看，不僅得出了CdTe（111）清潔及堿金屬K吸附價(jià)帶譜與同步輻射光電子譜相吻合的結(jié)果，而且發(fā)現(xiàn)了CdTe（111）表面具有四類不同原子近鄰特征国产视频福利网站，表現(xiàn)出四類不同的表面結(jié)構(gòu)及電子結(jié)構(gòu)特征：不同表面態(tài)分布在线视频自拍网、不同的表面結(jié)構(gòu)穩(wěn)定性（表層原子與次層原子成三鍵有一懸掛鍵的表面要比表層原子與次層原子成一鍵有三懸掛鍵穩(wěn)定（與Wu等人實(shí)驗(yàn)結(jié)果一致））、不同的H吸附特性一级黄片在线免费看。

It is shown in an external quantum efficiency diagram that the planar back surface has the best response to a wavelength between 440 and 1000 nm and the sawed-off back surface has a better long wavelength response.

外量子效率的測量顯示国产精品久久97，平背表面對(duì)440~1000nm的光響應(yīng)都是最優(yōu)，截?cái)嘟鹱炙潮砻嬗休^好的長波響應(yīng)真人性交A级片播放,。

Different processes are used on the back surface of silicon wafers to form cells falling into three groups: textured, planar, and sawed-off pyramid back surface.

采用了三種不同的工藝對(duì)三組硅片進(jìn)行背表面處理无码一级做a爱过程免费不卡片，得到絨面背表面，平背表面和截?cái)嘟鹱炙潮砻妗?/p>

surface back bond：表面背鍵

surface 面,表面 =表面 | surface back bond 表面背鍵 | surface charge 表面電荷

back to back diodes：背對(duì)背二極管

back surface field 背面電場 | back to back diodes 背對(duì)背二極管 | back wave 返波

back-lighted plotting surface：反光繪圖面

back-level release ==> 后層釋放 | back-lighted plotting surface ==> 反光繪圖面 | back-migration ==> 反向移動(dòng)