Then silicon carbide crystal was grown by the sublimation method under a low pressure and high temperature region. The decomposition reaction of SiC was simulated according to the thermodynamic theory. The result shows that the dominating species under thermodynamic equilibrium are Si,SiC2 and Si2C at about 2300℃.

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Through doing thermodynamic simulation on the relationships among equilibrium concentration of gangue heap exhausted gas to temperature,pressure ratio and proportion of vapor in air and gas concentration of self-combustion gangue heap,the thermodynamic condition of spontaneous gangue heap to explode was got.

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