Copper was etched from the unprinted areas of the PEN film using an etchant bath containing a ferric chloride etchant solution of strength 42° Baume supplied by RS.

銅蝕刻從PEN薄膜的未印刷領域使用的蝕刻劑浴含有三氯化鐵蝕刻劑的力量解決42 °波美由RS供應。

Copper was etched from the uncoated areas of the FR4 board using an etchant bath containing a ferric chloride etchant solution of strength 42° Baume supplied by RS.

銅被蝕刻從FR4電路板的涂層領域的腐蝕劑浴使用含有三氯化鐵蝕刻劑的力量解決42 °波美由RS供應亚州一二区。

Copper was etched from the unprinted areas of the FR4 board using an etchant bath containing a ferric chloride etchant solution of strength 42° Baume supplied by RS.

銅被蝕刻從FR4電路板的未印刷領域使用的蝕刻劑浴含有三氯化鐵蝕刻劑的力量解決42 °波美由RS供應国产在线视频超彭。

Stainless steel 35-42 °Be FeCl 3 35-55 Mild steel 35-42 °Be FeCl 3 35-55 Beryllium copper 30-42 °Be FeCl 3 or 40-55 ammoniacal copper or 33 °Be acidic CuCl 2 Copper and copper 30-42 °Be FeCl 3 or 40-55 alloys ammoniacal copper or 33 °Be acidic CuCl 2 Inconel and other 38-42 °Be FeCl 3 or 45-55 high nickel alloys conc nitric/conc hydrochloric acid/water 1:1:3 Aluminium 20% NaOH 60-90 or conc hydrochloric 20-65 acid/water 1:4 55 or alkaline potassium ferricyanide Brass 30-42 °Be FeCl 3 or 40-55 ammoniacal copper or 33 °Be acidic CuCl 2 Molybdenum Alkaline potassium 55 ferricyanide 40-55 or 40 °Be Fe(NO 3 ) 3 Titanium 10-50% HF 30-50 (optionally with HNO 3 )*The concentration of etchant (column 2) is measured in Degrees Baume where:°Be = 145 (SG - 1/SG); and SG is the specific gravity of the solution.

表美- 00002表2金屬共同腐蝕劑*溫度° C的不銹鋼35-42 °成為氯化鐵三 35-55低碳鋼35-42 °成為氯化鐵三 35-55鈹銅30-42 °成為氯化鐵3或40-55氨銅或33 °是酸性CuCl的2銅及銅30-42 °成為氯化鐵三或40-55合金氨銅或33 °是酸性CuCl的2鎳鉻鐵合金和其他38-42 °成為三氯化鐵3或45-55高鎳合金濃硝酸/濃鹽酸/水1時01分03秒鋁20％的NaOH濃鹽酸60-90或20-65酸/水1：4 55或氰化鉀銅30-42 °堿性鉀成為三氯化鐵3或40-55氨銅或33 °是酸性CuCl的二鉀55鉬堿性鐵氰化鉀40-55或40 °成為鐵Fe（NO 3）3鈦10-50％的HF 30-50*的濃度對侵蝕劑（欄2）測量波美度其中：°成為= 145（法興- 1/SG）；和SG是比重国产精品女主播国产区。

The fabrication processes for nano-silicon-tips using a (100) single crystal silicon wafer by the anisotropic wet etching in the KOH etchant were designed. Based on the experiment and the model of {411} crystal planes, the crystal planes of silicon tips were analyzed. Through discussing the effect of the mask direction on tip shapes, the process parameters to get high aspect ratio nano-silicon-tips were achieved.

設計了硅尖制備的工藝流程女人的奶头(无遮挡)免费，采用KOH溶液濕法各向異性腐蝕(100)單晶硅的方法制備硅尖，根據實驗結果和{411}晶面模型2021国产高清视频，分析了硅尖側壁的組成晶面亚洲福利一区二区三区美女导航，討論了掩模偏轉方向對硅尖形狀的影響，得到了制備高縱橫比納米硅尖的工藝參數日本人人操人人爱。

The fabrication processes for nano-silicon-tips using a (100) single crystal silicon wafer by the anisotropic wet etching in the KOH etchant were designed.Based on the experiment and the model of {411} crystal planes,the crystal planes of silicon tips were analyzed.

設計了硅尖制備的工藝流程AA级毛片视频免费观看，采用KOH溶液濕法各向異性腐蝕(100)單晶硅的方法制備硅尖，根據實驗結果和{411}晶面模型色色网五月，分析了硅尖側壁的組成晶面丁香五月综合婷婷激情，討論了掩模偏轉方向對硅尖形狀的影響，得到了制備高縱橫比納米硅尖的工藝參數性爱不卡视频网站。

A process and etchant gas composition for anisotropically etching a trench in a silicon nitride layer of a multilayer structure and an etchant gas composition.

要約 一種在多層結構的氮化硅層中各向異性地腐蝕溝槽的工藝和腐蝕劑氣體組分美女被男人桶岀白浆网站。

Etchant chemicals: Etchant chemical components, it is not the same as the etching rate, etching coefficient.

蝕刻液的化學身分的構不敗：蝕刻液的化學組分不不對別国产精品JIZZJIZZ，其蝕刻速度不離不不異黄色一级视频在线观看，蝕刻系數也不不對別。

May etch in any etchant, except chromic/sulfuric.

可以蝕刻在任何etchant女性毛片A，除鉻/sulfuric成年人黄色视频网站。

The morphologies of the CdZnTe etch pits developed by four etchants including Nakagawa, Everson, EAg1 and EAg2 solutions are studied. The results show that the etch pits of EAg2 etchant on the (111) B surface are flat-bottomed. And the etch pits of Everson etchant on (111) B include flat-bottomed pits and pyramidal pits with different slant directions, while the positions of pyramidal pits don′t move as the surface layer is continuously removed.

對碲鋅鎘晶體常用的Nakagawa、Everson白白色在线免费观看、EAg1和EAg2四種腐蝕劑在碲鋅鎘材料（111）晶面上的腐蝕坑坑形進行了研究亚洲人人插，結果發(fā)現，EAg2腐蝕劑在（111）B面上的腐蝕坑為平底坑91精品国产色综合久久久久，Everson腐蝕劑在(111)B面上產生的腐蝕坑包括平底坑和帶有不同傾斜方向坑底的三角錐形坑又粗又大又爽视频，進一步的研究還表明，三角錐形坑并未沿著坑底的傾斜方向向下延伸800av..com。