The saturable absorption and bistability are observed and based on this phenomenon, a new mode-locking scheme of modulating the saturable absorption section with RF signal forward and reverse biased respectively is proposed.

觀察到了飽和吸收以及雙穩(wěn)現(xiàn)象，并據(jù)此提出了利用正/反向調(diào)制飽和吸收區(qū)的方法實現(xiàn)光纖光柵外腔激光器鎖模調(diào)制的新機制中文在线一页。

The I-V characteristics of the diodes with 100μm diameter indicated that as the densities of V-defects on GaN films increased from 4.1×105cm-2 to 1.03×107cm-2, the Schottky barrier height decreased from 1.44eV to 1.19eV and the reverse bias leakage current at -1V is increased sharply from 10-10A to 10-7A . Further studies on a single V-defect using conductive atomic force microscope demonstrated that the value of forward current biased at 8V at V-defect side-walls appears to be one order higher than that of plain region, indicating that the conductivity mainly occurred at the side-walls of V-defect.

實驗結(jié)果發(fā)現(xiàn)人人操人人看人人摸人人干，隨著V型缺陷密度由4.1×105cm-2增加至1.03×107cm-2，在氮化鎵表面蒸鍍鎳金屬所制成直徑為100μm的蕭基元件之所屬能障從1.44eV下降至1.19eV鸥美免费黄片观看，而且在-1V的操作下反向偏壓漏電流從10-10A急遽的攀升至10-7A超碰在干；為了了解V型缺陷對厘米尺寸n-GaN蕭基元件電流傳導(dǎo)機制之影響，我們進一步的利用導(dǎo)電原子力顯微鏡(Conductive Atomic Force Microscopy日本一区二区欧美亚洲国产， C-AFM)，特別針對單一個V型缺陷進行微觀電性之量測黄色网站传送门。

Due to forward-bias-induced annealing effects,the laser diode biased during irradiation is less degraded than that short-circuited,and annealing curves can be fitted sectionally with different annealing rates.

激光二極管輻射損傷存在著正向偏置退火效應(yīng)99爱免费视频最新版本，F(xiàn)P和DFB結(jié)構(gòu)的二極管具有相似的加電退火規(guī)律，均可擬合成指數(shù)衰減形式老熟妇仓乱视频一区二区，退火曲線可以分成退火常數(shù)不同的幾段進行擬合黄片观看无码在线。