From this model, we can find how the channel length, channel doping concentration, the thickness of silicon film and gate oxide influences the threshold voltage, and the variation of threshold voltage is independent on back-gate bias.

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Thus, the output will always be driven by a single transistor, either P- channel or N-channel. Since they are as closely matched as possible, the output resistance of the gate will always be the same, and signal behavior is therefore more predictable. Fig. 3.4 CMOS NAND gate One of the main problems with CMOS gates is their speed. They cannot operate very quickly, because of their inherent input capacitance. B-series devices help to overcome these 24 Lesson 3 CMOS Logic Circuit 25 limitations to some extent, by providing uniform output current, and by switching output states more rapidly, even if the input signals are changing more slowly. Note that we haven't gone into all of the details of CMOS gate construction here. For example, to avoid damage caused by static electricity, different manufacturers developed a number of input protection circuits to prevent input voltages from becoming too high. [3] However, these protection circuits don't affect the logical behavior of the gates, so we won't go into the details here. New Words and Phrases 1. CMOS abbr.

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However, the role of inactivation gate of sodium channel is not clear. In present study, single fibre recording in vivo from dorsal root on chronically compressed DRG model was used. We analyzed the characters of ISI series of oscillation firing of type A neurons induced by veratridine, an inhibitor of inactivation gate of sodium channel.

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A novel lightly-doped channel approach for linearity improvement of InGaP/InGaAs pseudomorphic high-electron-mobility transistor device was presented. Light doping in the channel region of the conventional δ-doped InGaP/InGaAs PHEMT was adopted to provide a uniform and symmetric electron distribution in the channel region to achieve flat extrinsic transconductance distribution under different gate bias conditions.

本次實驗在傳統(tǒng)矽平面摻雜元件結(jié)構(gòu)的通道區(qū)域中加入微量的雜質(zhì)濃度摻雜，使得電子在元件通道層中的分布更為均勻及對稱91欧美精品自拍网站，以期望在不同的閘極偏壓條件下得到較為平坦的轉(zhuǎn)導(dǎo)值分布曲線色呦呦视频网站，改善磷化銦鎵/砷化銦鎵假晶式高電子遷移率電晶體的線性度表現(xiàn)。

The thin film transistor may include a channel layer, a source electrode, a drain electrode, a protective layer, a gate electrode, and/or a gate insulating layer.

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Second, as the gate channel length decreases, the switching time of each gate will decrease.

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The gate insulating layer may be interposed between the gate electrode and the channel layer.

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The effects of DMSG structure on channel electrostatic potential and channel potential is taken into account, and the relation between the length of control gate and the short channel effects is analyzed.

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The thin film transistor may include: a gate insulting layer; a gate electrode formed on the gate insulating layer; a channel layer formed on the gate insulating layer; and source and drain electrodes that contact the channel layer.

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Antinociception and VGSC-modulation of BmK IT2 and BmK AS—1. The results from nociceptive flexion reflex and plantar radiation heat showed: BmK IT2 (a depressant insect-selective neurotoixn) and BmK AS-1 (a new-type β-1ike neurotoxin) have significant antinociceptive effects on rat peripheral nerve system. The antinociceptive effects of BmK IT2 on the carrageenan-inflamed rats were significantly stronger than those on the normal rats. Whole-cell patch-clamping showed: Both TTX-S and TTX-R Na〓 currents induced from rat DRG neurons were significantly inhibited by BmK IT2 and BmK AS—1, and BmK IT2 was more sensitive to TTX-R than TTX-S component. All the results suggested: the peripheral antinociception of BmK IT2 and BmK AS—1 might be attributed to the inhibitory effects of them on the TTX-S and TTX-R Na〓 channel located on the peripheral ends of rat DRG neurons with small diameter.

中文題名特異性鈉通道調(diào)制劑－長鏈蝎神經(jīng)毒素的藥理功能研究副題名外文題名 The study of pharmacological function of the specific modulators on voltage-gate Na+ channel-long chain scorpion neurotoxin 論文作者譚智勇導(dǎo)師吉永華研究員學(xué)科專業(yè)生理學(xué)研究領(lǐng)域\研究方向?qū)W位級別博士學(xué)位授予單位中國科學(xué)院上海生命科學(xué)研究院學(xué)位授予日期2002 論文頁碼總數(shù)93頁關(guān)鍵詞神經(jīng)毒素毒理學(xué)電壓門控鈉通道東亞鉗蝎鈉通道調(diào)制劑館藏號BSLW /2003 /R338 /22 本論文工作利用細(xì)胞和行為藥理技術(shù)系統(tǒng)地研究了東亞鉗蝎長鏈神經(jīng)毒素的抗傷害性效應(yīng)、對電壓門控鈉通道的電生理調(diào)制作用毛片播放网站在线免费、改變胞內(nèi)離子濃度的效應(yīng)3p性A片免费，并分析了相關(guān)的藥理功能機(jī)制。